叠盖电极技术在SPRITE 探测器上的应用

文中主要介绍了叠盖电极技术在SPRITE探测器上的实际应用，并给出了具体实验结果。选择适当的叠盖电极尺寸可以使SPRITE的响应率Rυ提高一倍以上，探测率D^*普遍提高30％左右，高的可达80％。实验结果表明，叠盖电极技术明显地提高了SPRITE器件的性能，是一种简便的提高SPRITE性能的新途径。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

压差式漏率测试仪的实验研究

将薄膜电容真空计的测量室接于被测密闭容器，静态真空室接于一个比较容器，即组成一台压差式漏率测试仪。首先使两容器压力平衡，真空计读数为零。当被测容器存在漏孔时，真空计薄膜两侧形成压差，真空计指示读数，继而计算出该容器的漏率。应用商品真空计在抽真空测试时，检测的最小可测漏率达10－4～10-5Pa·L／s；而在充压测试时，因受气体温度变化的影响，灵敏度会降低几个量级。该仪器有可能具备寻找漏孔位置和确定漏孔漏率的功能。     

XCOY-1型三电极一氧化碳检测报警仪的研制

文中介绍一种一氧化碳检测报警器，利用恒电位电解法原理制成的传感器，并配以最新电子元器件组成检测仪。用于对矿井、化工、煤炭、电力、冶金、环保等有关部门的一氧化碳检测。     

半导体芯片厂有害气体检测器使用经验之探讨

本文除概略介绍气体检测器的种类处，主要对气体检测器的原理和在实际使用中的局限性作一基本归纳叙述。限于篇幅，本文将论述的重点放在气体检测器的选用与设置规划上，提出个人的一点心得与看法，以作为未来设置气体检测器系统时之参考。     

分子束外延生长3英寸HgCdTe晶片

报道了用分子束外延的方法制备3英寸HgCdTe薄膜的研究结果,获得的HgCdTe外延材料均匀性良好,在直径70mm圆内,组份标准偏差率为1.2%,对应80K截止波长偏差仅为0.1μm.经过生长条件的改进,表面形貌获得了大幅度改善,缺陷密刃∮00cm-2,缺陷尺寸小于10μm,可以满足大规模HgCdTe焦平面列阵的应用需求.抖     

定向探测引信技术分析

从提高引信与战斗部配合效率出发 ,根据定向战斗部的战术技术性能 ,介绍了一种能够识别弹体周围 4个方向目标的定向探测引信 .分析了定向探测器的工作原理和目标方位识别的关键技术 ,并对探测天线的设计做了详细的分析和计算 .     

软β核素内部样品塑料闪烁探测器

本文评价了塑料闪烁片用作软β核素探测器时的计数效率、β谱、本底谱和康普顿电子谱的特征。文中强调:采用胶合光导剂构成的系统是一种新型探测器(软β核素内部样品塑料闪烁探测器)。本文提出内部样品固体探测器、胶合光导剂和胶合闪烁光导剂的新概念。     

Determination of the uranium enrichment with the NaIGEM code

The traditional method used to non-destructively determine the uranium enrichment with an NaI detector is based on the “enrichment meter principle” (Progress report LA-4605-MS, Los Alamos National Laboratory, NNM, 1970, p. 19), which involves measuring the intensity of the 186 keV line of ²³⁵U by selecting two regions of interest for the peak and the background. This type of method suffers from several limitations, the most limiting of which are the impossibility to make wall thickness correction or to take the inference of foreign radioisotopes into account. The NaIGEM software (A guide for using NaIGEM code, version 1.5 for DOS and Windows, 2001; Nucl. Instr. and Meth. A 458 (2001) 196) was developed to overcome these limitations by calculating the 186 keV line intensity with a fitting procedure. The code was tested in different measurement conditions on the wide variety of certified samples, in particular, on reprocessed uranium and on depleted material with thick steel filters interposed between the source and the detector. The results are presented to illustrate the performance and limitations of the tested version (A guide for using NaIGEM code, version 1.5 for DOS and Windows, 2001). The general performance is good except in the case of low-enriched uranium in thick containers.     

Single and matrix HgCdTe photovoltaic detectors

The recent researches and technological developments of middle and long wavelength infrared HgCdTe photovoltaic detectors are presented. Structure, topology, design and performance of HgCdTe photodiodes, silicon readout electronics, Focal Plane Arrays both staring and time delay and integration types, thermal imagers are discussed. Negative differential conductance, bistability and high frequency oscillations under background infrared radiation in HgCdTe photodiodes are reported.